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MMSF3300 数据表(PDF) 1 Page - Motorola, Inc |
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MMSF3300 数据表(HTML) 1 Page - Motorola, Inc |
1 / 12 page 1 Motorola TMOS Power MOSFET Transistor Device Data Advance Information WaveFET™ Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor WaveFET ™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET ™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Characterized Over a Wide Range of Power Ratings • Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Miniature SO–8 Surface Mount Package — Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Drain–to–Gate Voltage VDGR 30 Vdc Gate–to–Source Voltage VGS ±20 Vdc Gate–to–Source Operating Voltage VGS ±16 Vdc Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc) EAS 500 mJ DEVICE MARKING ORDERING INFORMATION S3300 Device Reel Size Tape Width Quantity S3300 MMSF3300R2 13 ″ 12 mm embossed tape 2500 units This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Order this document by MMSF3300/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1998 CASE 751– 06, Style 12 SO–8 MMSF3300 SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 12.5 mW ™ D G S Source 1 2 3 4 8 7 6 5 TOP VIEW Source Source Gate Drain Drain Drain Drain REV 3 |
类似零件编号 - MMSF3300 |
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类似说明 - MMSF3300 |
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