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MMSF3300 数据表(PDF) 1 Page - Motorola, Inc

部件名 MMSF3300
功能描述  SINGLE TMOS POWER MOSFET 30 VOLTS
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制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
标志 MOTOROLA - Motorola, Inc

MMSF3300 数据表(HTML) 1 Page - Motorola, Inc

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Motorola TMOS Power MOSFET Transistor Device Data
Advance Information
WaveFET™
Power Surface Mount Products
HDTMOS Single N-Channel
Field Effect Transistor
WaveFET
™ devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Logic Level Gate Drive — Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO–8 Surface Mount Package —
Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage
VDGR
30
Vdc
Gate–to–Source Voltage
VGS
±20
Vdc
Gate–to–Source Operating Voltage
VGS
±16
Vdc
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc)
EAS
500
mJ
DEVICE MARKING
ORDERING INFORMATION
S3300
Device
Reel Size
Tape Width
Quantity
S3300
MMSF3300R2
13
12 mm embossed tape
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF3300/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
© Motorola, Inc. 1998
CASE 751– 06, Style 12
SO–8
MMSF3300
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 12.5 mW
D
G
S
Source
1
2
3
4
8
7
6
5
TOP VIEW
Source
Source
Gate
Drain
Drain
Drain
Drain
REV 3


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