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OP291GS 数据表(PDF) 5 Page - Analog Devices

部件名 OP291GS
功能描述  Micropower Single-Supply Rail-to-Rail Input/Output Op Amps
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

OP291GS 数据表(HTML) 5 Page - Analog Devices

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OP191/OP291/OP491
REV. 0
–5–
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND to VS + 10 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range
OP191/OP291/OP491G . . . . . . . . . . . . . . . –40
°C to +125°C
Junction Temperature Range
P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300
°C
Package Type
θ
JA
2
θ
JC
Units
8-Pin Plastic DIP (P)
103
43
°C/W
8-Pin SOIC (S)
158
43
°C/W
14-Pin Plastic DIP (P)
76
33
°C/W
14-Pin SOIC (S)
120
36
°C/W
14-Pin TSSOP (RU)
180
35
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
θ
JA is specified for the worst case conditions; i.e., θJA is specified for device in socket
for P-DIP packages;
θ
JA is specified for device soldered in circuit board for TSSOP
and SOIC packages.
WAFER TEST LIMITS
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
VOS
±300
µV max
Input Bias Current
IB
50
nA max
Input Offset Current
IOS
8nA
Input Voltage Range
VCM
V– to V+
V min
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to +2.9 V
70
dB min
Power Supply Rejection Ratio
PSRR
V = 2.7 V to +12 V
80
dB min
Large Signal Voltage Gain
AVO
RL = 10 k
50
V/mV min
Output Voltage High
VOH
RL = 2 k
Ω to GND
2.8
V min
Output Voltage Low
VOL
RL = 2 kΩ to V+
75
mV max
Supply Current/Amplifier
ISY
VO = 0 V, RL =
350
µA max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
(@ VS = +3.0 V, VCM = 0.1 V, TA = +25°C unless otherwise noted)
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description
Option
OP191GP
–40
°C to +125°C 8-Pin Plastic DIP N-8
OP191GS
–40
°C to +125°C 8-Pin SOIC
SO-8
OP191GBC
+25
°C
DICE
OP291GP
–40
°C to +125°C 8-Pin Plastic DIP N-8
OP291GS
–40
°C to +125°C 8-Pin SOIC
SO-8
OP291GBC
+25
°C
DICE
OP491GP
–40
°C to +125°C 14-Pin Plastic DIP N-14
OP491GS
–40
°C to +125°C 14-Pin SOIC
SO-14
OP491HRU
–40
°C to +125°C 14-Pin TSSOP
RU-14
OP491GBC
+25
°C
DICE
2
3
4
6
7
OP191 Die Size 0.047
× 0.066 Inch,
3,102 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 74.
2
1
2
1
8
7
6
5
4
3
8
7
6
5
4
3
2
1
8
7
6
5
4
3
OP291 Die Size 0.070
× 0.070 Inch,
4,900 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 146
DICE CHARACTERISTICS
2
1
14
13
12
11
10
9
8
7
6
5
4
3
OP491 Die Size 0.070
× 0.110 Inch,
7,700 Sq. Mils. Substrate (Die Back-
side) Is Connected to V+.
Transistor Count, 290.


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