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OP291GS 数据表(PDF) 5 Page - Analog Devices |
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OP291GS 数据表(HTML) 5 Page - Analog Devices |
5 / 20 page OP191/OP291/OP491 REV. 0 –5– ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND to VS + 10 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite Storage Temperature Range P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Operating Temperature Range OP191/OP291/OP491G . . . . . . . . . . . . . . . –40 °C to +125°C Junction Temperature Range P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300 °C Package Type θ JA 2 θ JC Units 8-Pin Plastic DIP (P) 103 43 °C/W 8-Pin SOIC (S) 158 43 °C/W 14-Pin Plastic DIP (P) 76 33 °C/W 14-Pin SOIC (S) 120 36 °C/W 14-Pin TSSOP (RU) 180 35 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 θ JA is specified for the worst case conditions; i.e., θJA is specified for device in socket for P-DIP packages; θ JA is specified for device soldered in circuit board for TSSOP and SOIC packages. WAFER TEST LIMITS Parameter Symbol Conditions Limit Units Offset Voltage VOS ±300 µV max Input Bias Current IB 50 nA max Input Offset Current IOS 8nA Input Voltage Range VCM V– to V+ V min Common-Mode Rejection Ratio CMRR VCM = 0 V to +2.9 V 70 dB min Power Supply Rejection Ratio PSRR V = 2.7 V to +12 V 80 dB min Large Signal Voltage Gain AVO RL = 10 k Ω 50 V/mV min Output Voltage High VOH RL = 2 k Ω to GND 2.8 V min Output Voltage Low VOL RL = 2 kΩ to V+ 75 mV max Supply Current/Amplifier ISY VO = 0 V, RL = ∞ 350 µA max NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. (@ VS = +3.0 V, VCM = 0.1 V, TA = +25°C unless otherwise noted) ORDERING GUIDE Temperature Package Package Model Range Description Option OP191GP –40 °C to +125°C 8-Pin Plastic DIP N-8 OP191GS –40 °C to +125°C 8-Pin SOIC SO-8 OP191GBC +25 °C DICE OP291GP –40 °C to +125°C 8-Pin Plastic DIP N-8 OP291GS –40 °C to +125°C 8-Pin SOIC SO-8 OP291GBC +25 °C DICE OP491GP –40 °C to +125°C 14-Pin Plastic DIP N-14 OP491GS –40 °C to +125°C 14-Pin SOIC SO-14 OP491HRU –40 °C to +125°C 14-Pin TSSOP RU-14 OP491GBC +25 °C DICE 2 3 4 6 7 OP191 Die Size 0.047 × 0.066 Inch, 3,102 Sq. Mils. Substrate (Die Back- side) Is Connected to V+. Transistor Count, 74. 2 1 2 1 8 7 6 5 4 3 8 7 6 5 4 3 2 1 8 7 6 5 4 3 OP291 Die Size 0.070 × 0.070 Inch, 4,900 Sq. Mils. Substrate (Die Back- side) Is Connected to V+. Transistor Count, 146 DICE CHARACTERISTICS 2 1 14 13 12 11 10 9 8 7 6 5 4 3 OP491 Die Size 0.070 × 0.110 Inch, 7,700 Sq. Mils. Substrate (Die Back- side) Is Connected to V+. Transistor Count, 290. |
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类似说明 - OP291GS |
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