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AD7896BN 数据表(PDF) 3 Page - Analog Devices

部件名 AD7896BN
功能描述  2.7 V to 5.5 V, 12-Bit, 8 us ADC in 8-Pin SO/DIP
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

AD7896BN 数据表(HTML) 3 Page - Analog Devices

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AD7896
REV. B
–3–
A, B
J
S
Parameter
Versions
Version
Version
Units
Test Conditions/Comments
t1
40
40
40
ns min
CONVST
Pulse Width
t2
40
2
40
2
45
2
ns min
SCLK High Pulse Width
t3
40
2
40
2
45
2
ns min
SCLK Low Pulse Width
t4
Data Access Time After Falling Edge of SCLK
60
3
60
3
70
3
ns max
VDD = 5 V
± 10%
100
3
100
3
110
3
ns max
VDD = 2.7 V to +3.6 V
t5
10
10
10
ns min
Data Hold Time After Falling Edge of SCLK
t6
50
4
50
4
50
4
ns max
Bus Relinquish Time After Falling Edge of SCLK
NOTES
1Sample tested at +25
°C to ensure compliance. All input signals are measured with tr = tf = 1 ns (10% to 90% of V
DD) and timed from a voltage level of +1.4 V.
2The SCLK maximum frequency is 10 MHz. Care must be taken when interfacing to account for the data access time, t
4, and the setup time required for the user's
processor. These two times will determine the maximum SCLK frequency that the user's system can operate with. See Serial Interface section for more information.
3Measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.0 V.
4Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t 6, quoted in the timing characteristics is the true bus relinquish time
of the part and as such is independent of external bus loading capacitances.
TIMING CHARACTERISTICS1 (VDD = +2.7 V to +5.5 V, AGND = DGND = 0 V)
ABSOLUTE MAXIMUM RATINGS*
(TA = +25
°C unless otherwise noted)
VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDD to DGND. . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Input Voltage to AGND . . . . . . –0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND . . . . . . –0.3 V to VDD + 0.3 V
Digital Output Voltage to DGND . . . . . –0.3 V to VDD + 0.3 V
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . 0
°C to +70°C
Industrial (A, B Versions) . . . . . . . . . . . . . . . –40
°C to +85°C
Extended (S Version) . . . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°C
Plastic DIP Package, Power Dissipation . . . . . . . . . . . 450 mW
θ
JA Thermal Impedance
. . . . . . . . . . . . . . . . . . . . . 125
°C/W
θ
JC Thermal Impedance.
. . . . . . . . . . . . . . . . . . . . . 50
°C/W
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . +260
°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 450 mW
θ
JA Thermal Impedance
. . . . . . . . . . . . . . . . . . . . . 160
°C/W
θ
JC Thermal Impedance
. . . . . . . . . . . . . . . . . . . . . . 75
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000 V
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
+1.6V
2.0mA
2.0mA
50pF
TO
OUTPUT
PIN
Figure 1. Load Circuit for Access Time and Bus Relinquish
Time


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