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ST2341S23RG_V2 数据表(PDF) 3 Page - List of Unclassifed Manufacturers |
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ST2341S23RG_V2 数据表(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 6 page ![]() ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2341SRG3RG 2006. Rev.1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.35 -0.9 V Gate Leakage Current IGSS VDS=0V,VGS= 20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 uA VDS=-20V,VGS=0V TJ=55 -10 On-State Drain Current ID(on) VDS -5V,VGS=-4.5V -6 A Drain-source On-Resistance RDS(on) VGS=-4.5V,ID=-3.3A VGS=-2.5V,ID=-2.8A VGS=-1.8V,ID=-2.3A 0.030 0.040 0.053 0.040 0.045 0.057 Forward Transconductance gfs VDS=-5V,ID=-4V 3.0 S Diode Forward Voltage VSD IS=-1A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-6V VGS=-4.5V ID -3.3A 8.0 13 nC Gate-Source Charge Qgs 1.2 Gate-Drain Charge Qgd 2.2 Input Capacitance Ciss VDS=-6.0V VGS=0V F=1MHz 700 pF Output Capacitance Coss 160 Reverse Transfer Capacitance Crss 120 Turn-On Time td(on) tr VDD=-6V RL=6 ID=-1.0A VGEN=-4.5V RG=6 15 25 nS 35 55 Turn-Off Time td(off) tf 60 90 40 40 |
类似零件编号 - ST2341S23RG_V2 |
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类似说明 - ST2341S23RG_V2 |
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