ST2341S23RG_V2 datasheet(3/6 Pages) ETC2

部件名	ST2341S23RG_V2

功能描述	P Channel Enhancement Mode MOSFET

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制造商	ETC2 [List of Unclassifed Manufacturers]

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ST2341S23RG

P Channel Enhancement Mode MOSFET

-5.3A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341SRG3RG 2006. Rev.1

ELECTRICAL CHARACTERISTICS

( Ta = 25

Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA -0.35

-0.9

V

Gate Leakage Current

IGSS

VDS=0V,VGS= 20V

100

nA

Zero Gate Voltage Drain

Current

IDSS

VDS=-20V,VGS=0V

-1

uA

VDS=-20V,VGS=0V

TJ=55

-10

On-State Drain Current

ID(on)

VDS

-5V,VGS=-4.5V

-6

A

Drain-source On-Resistance

RDS(on)

VGS=-4.5V,ID=-3.3A

VGS=-2.5V,ID=-2.8A

VGS=-1.8V,ID=-2.3A

0.030

0.040

0.053

0.040

0.045

0.057

Forward Transconductance

gfs

VDS=-5V,ID=-4V

3.0

S

Diode Forward Voltage

VSD

IS=-1A,VGS=0V

-0.8

-1.2

V

Dynamic

Total Gate Charge

Qg

VDS=-6V

VGS=-4.5V

ID

-3.3A

8.0

13

nC

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

2.2

Input Capacitance

Ciss

VDS=-6.0V

VGS=0V

F=1MHz

700

pF

Output Capacitance

Coss

160

Reverse Transfer

Capacitance

Crss

120

Turn-On Time

td(on)

tr

VDD=-6V

RL=6

ID=-1.0A

VGEN=-4.5V

RG=6

15

25

nS

35

55

Turn-Off Time

td(off)

tf

60

90

40

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