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AD587KQ 数据表(PDF) 4 Page - Analog Devices

部件名 AD587KQ
功能描述  High Precision 10 V Reference
Download  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

AD587KQ 数据表(HTML) 4 Page - Analog Devices

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REV. F
–4–
AD587
THEORY OF OPERATION
The AD587 consists of a proprietary buried Zener diode refer-
ence, an amplifier to buffer the output, and several high stability
thin-film resistors as shown in the block diagram in Figure 1.
This design results in a high precision monolithic 10 V output
reference with initial offset of 5 mV or less. The temperature
compensation circuitry provides the device with a temperature
coefficient of under 5 ppm/
°C.
8
2
6
4
5
RT
RF
RI
RS
AD587
A1
+VIN
NOISE
REDUCTION
VOUT
TRIM
GND
NOTE
PINS 1, 3 AND 7 ARE INTERNAL TEST POINTS.
NO CONNECTIONS TO THESE POINTS.
Figure 1. Functional Block Diagram
A capacitor can be added at the NOISE REDUCTION pin
(Pin 8) to form a low-pass filter with RS to reduce the noise
contribution of the Zener to the circuit.
APPLYING THE AD587
The AD587 is simple to use in virtually all precision reference
applications. When power is applied to Pin 2, and Pin 4 is
grounded, Pin 6 provides a 10 V output. No external components
are required; the degree of desired absolute accuracy is achieved
simply by selecting the required device grade. The AD587 requires
less than 4 mA quiescent current from an operating supply of 15 V.
Fine trimming may be desired to set the output level to exactly
10.000 V (calibrated to a main system reference). System calibra-
tion may also require a reference voltage that is slightly different
from 10.000 V, for example, 10.24 V for binary applications. In
either case, the optional trim circuit shown in Figure 2 can offset
the output by as much as 300 mV with minimal effect on other
device characteristics.
8
2
6
4
GND
5
AD587
VIN
NOISE
REDUCTION
TRIM
VO
10k
OUTPUT
+VIN
CN
1 F
OPTIONAL
NOISE
REDUCTION
CAPACITOR
Figure 2. Optional Fine Trim Configuration
NOISE PERFORMANCE AND REDUCTION
The noise generated by the AD587 is typically less than 4
µV p-p
over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz bandwidth is
approximately 200
µV p-p. The dominant source of this noise is
the buried Zener, which contributes approximately 100 nV/
√Hz.
In comparison, the op amp’s contribution is negligible. Figure 3
shows the 0.1 Hz to 10 Hz noise of a typical AD587. The noise
measurement is made with a band-pass filter made of a 1-pole
high-pass filter with a corner frequency at 0.1 Hz and a 2-pole
low-pass filter with a corner frequency at 12.6 Hz to create a
filter with a 9.922 Hz bandwidth.
Figure 3. 0.1 Hz to 10 Hz Noise
If further noise reduction is desired, an external capacitor may
be added between the NOISE REDUCTION pin and ground,
as shown in Figure 2. This capacitor, combined with the
4k
Ω R
S and the Zener resistances, forms a low-pass filter on the
output of the Zener cell. A 1
µF capacitor will have a 3 dB point
at 40 Hz, and will reduce the high frequency (to 1 MHz) noise
to about 160
µV p-p. Figure 4 shows the 1 MHz noise of a typi-
cal AD587 both with and without a 1
µF capacitor.
Figure 4. Effect of 1
µF Noise Reduction Capacitor
on Broadband Noise
TURN-ON TIME
Upon application of power (cold start), the time required for the
output voltage to reach its final value within a specified error
band is defined as the turn-on settling time. Two components
normally associated with this are the time for the active circuits
to settle, and the time for the thermal gradients on the chip to
stabilize. Figure 5 shows the turn-on characteristics of the AD587.
It shows the settling to be about 60
µs to 0.01%. Note the absence
of any thermal tails when the horizontal scale is expanded to
1ms/cm in Figure 5b.


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