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CSD17305Q5A 数据表(PDF) 5 Page - Texas Instruments

部件名 CSD17305Q5A
功能描述  The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD17305Q5A 数据表(HTML) 5 Page - Texas Instruments

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TC - Case Temperature - °C
-75
-25
25
75
125
175
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
G007
ID = 30A
VGS = 8V
VSD - Source-to-Drain Voltage - V
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
100
TC = 25°C
TC = 125°C
G008
VDS - Drain-to-Source Voltage - V
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1k
1ms
10ms
1s
DC
G009
Area Limited
by RDS(on)
Single Pulse
Typical RθJA = 96°C/W (min Cu)
1001
100ms
t(AV) - Time in Avalanche - ms
0.01
0.1
1
10
100
1
10
100
1k
TC = 25°C
TC = 125°C
G010
TC - Case Temperature - °C
-50
-25
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
G011
CSD17305Q5A
www.ti.com
SLPS254A – FEBRUARY 2010 – REVISED JULY 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2010, Texas Instruments Incorporated
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类似零件编号 - CSD17305Q5A_10

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