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ACE24C04B 数据表(PDF) 5 Page - ACE Technology Co., LTD. |
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ACE24C04B 数据表(HTML) 5 Page - ACE Technology Co., LTD. |
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5 / 20 page  ACE24C02/04/08/16B Two-wire Serial EEPROM VER 1.3 5 Write Protect Description WP Pin Status Part of the Array Protected ACE24C02B ACE24C04B ACE24C08B ACE24C16B At VCC Full (2K) Array Full (4K) Array Full (8K) Array Upper Half (16K) Array At GND Normal Read / Write Operations Memory Organization ACE24C02B, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address for random word addressing. ACE24C04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K requires a 9-bit data word address for random word addressing. ACE24C08B, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K requires a 10-bit data word address for random word addressing. ACE24C16B, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes each, the 16K requires an 11-bit data word address for random word addressing. Pin Capacitance Applicable over recommended operating range from: TA = 25℃, f = 1.0 MHz, VCC = +1.8V. Symbol Test Condition Max Units Conditions CI/O Input / Output Capacitance (SDA) 8 pF VI/O = 0V CIN Input Capacitance (A0, A1, A2, SCL) 6 pF VIN = 0V DC Characteristics Applicable over recommended operating range from: TA = -40℃ to +85℃, VCC = +1.8V to +5.5V, (unless otherwise noted). Symbol Parameter Test Condition Min Typ Max Units VCC Supply Voltage 1.8 5.5 V ICC1 Supply Current VCC = 5.0V, Read at 100kHz 0.4 1.0 mA ICC2 Supply Current VCC = 5.0V, Write at 100 kHz 2.0 3.0 mA ISB Standby Current VIN = VCC/GND 1.0 µA ILI Input Leakage Current VIN = VCC/GND 3.0 µA ILO Output Leakage Current VOUT = VCC/GND 0.05 3.0 µA VIL Input Low Level -0.3 VCCx0.3 V VIH Input High Level VCCx0.7 VCC+0.3 V VOL3 Output Low Level VCC = 5.0V, IOL = 3.0 mA 0.4 V |
类似零件编号 - ACE24C04B |
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类似说明 - ACE24C04B |
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