MJ15001 datasheet(1/4 Pages) MOTOROLA

部件名	MJ15001

功能描述	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS

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制造商	MOTOROLA [Motorola, Inc]

网页	http://www.freescale.com

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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Power

Transistors

The MJ15001 and MJ15002 are EpiBase power transistors designed for high

power audio, disk head positioners and other linear applications.

• High Safe Operating Area (100% Tested) —

200 W @ 40 V

50 W @ 100 V

• For Low Distortion Complementary Designs

• High DC Current Gain —

hFE = 25 (Min) @ IC = 4 Adc

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

140

Vdc

Collector–Base Voltage

VCBO

140

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector Current — Continuous

IC

15

Adc

Base Current — Continuous

IB

5

Adc

Emitter Current — Continuous

IE

20

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

200

1.14

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.875

_C/W

Maximum Lead Temperature for Soldering Purposes:

1/16

″ from Case for v 10 seconds

TL

265

_C

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ15001/D

MJ15001

MJ15002

15 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

140 VOLTS

200 WATTS

NPN

PNP

CASE 1–07

TO–204AA

(TO–3)

类似零件编号 - MJ15001

制造商	部件名	数据表	功能描述
ON Semiconductor	MJ15001	165Kb / 4P	POWER TRANSISTORS COMPLEMENTARY SILICON August, 2011 ??Rev. 5
ON Semiconductor	MJ15001	71Kb / 4P	Complementary Silicon Power Transistors December, 2005 ??Rev. 4
Savantic, Inc.	MJ15001	111Kb / 3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	MJ15001	129Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	MJ15001	112Kb / 3P	Silicon NPN Power Transistors

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