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FM25V01-G 数据表(PDF) 1 Page - Cypress Semiconductor

部件名 FM25V01-G
功能描述  128Kb Serial 3V F-RAM Memory
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

FM25V01-G 数据表(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-84492 Rev. *B
Revised May 29, 2013
FM25V01
128Kb Serial 3V F-RAM Memory
Features
128K bit Ferroelectric Nonvolatile RAM
Organized as 16,384 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID
Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
Active Current 120 A (typ. @ 1MHz)
Standby Current 90 A (typ.)
Sleep Mode Current 5 A (typ.)
Industry Standard Configurations
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM25V01 is a 128-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V01 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling.
The
product
offers
very
high
write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V01 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V01 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The device uses the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
technology. The device incorporates a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The
device
is
guaranteed
over
an
industrial
temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
VDD
HOLD
C
D
1
2
3
4
8
7
6
5
Pin Name
Function
/S
Chip Select
/W
Write Protect
/HOLD
Hold
C
Serial Clock
D
Serial Data Input
Q
Serial Data Output
VDD
Supply Voltage
VSS
Ground


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