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FM22LD16 数据表(PDF) 10 Page - Cypress Semiconductor |
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FM22LD16 数据表(HTML) 10 Page - Cypress Semiconductor |
10 / 14 page FM22LD16 - 256Kx16 FRAM Rev. 3.0 Oct. 2012 Page 10 of 14 Power Cycle Timing (TA = -40 C to + 85 C, VDD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes tPU Power-Up (after VDD min. is reached) to First Access Time 450 - s tPD Last Write (/WE high) to Power Down Time 0 - s tVR VDD Rise Time 50 - s/V 1,2 tVF VDD Fall Time 100 - s/V 1,2 Notes 1 Slope measured at any point on VDD waveform. 2 Ramtron cannot test or characterize all VDD power ramp profiles. The behavior of the internal circuits is difficult to predict when VDD is below the level of a transistor threshold voltage. Ramtron strongly recommends that VDD power up faster than 100ms through the range of 0.4V to 1.0V. Data Retention (VDD = 2.7V to 3.6V) Parameter Min Units Notes Data Retention 10 Years AC Test Conditions Input Pulse Levels 0 to 3V Input and Output Timing Levels 1.5V Input Rise and Fall Times 3 ns Output Load Capacitance 30pF Read Cycle Timing 1 (/CE low, /OE low) A(17:0) tRC tAA Previous Data Valid Data tOH Valid Data tRC tAA tOH DQ(15:0) Read Cycle Timing 2 (/CE-controlled) A(17:0) DQ(15:0) tAS tHZ tOE tOH tOHZ UB / LB OE CE tBA tBHZ tCA tPC tAH tCE |
类似零件编号 - FM22LD16 |
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类似说明 - FM22LD16 |
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