IRF840 datasheet(2/3 Pages) COMSET

部件名	IRF840

功能描述	N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

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2 / 3 page

IRF840

2/3

09/11/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

500

-

V

VGS(th)

Gate-threshold Voltage

ID= 250 µA, VGS= VDS

2

3

4

V

IDSS

Zero Gate Voltage Drain

Current

VDS= 500 V, VGS= 0 V

Tj= 25 °C

-

25

µA

VDS= 500 V, VGS= 0 V

Tj= 125 °C

-

250

IGSS

Gate-Source leakage

Current

VGS= 20 V, VDS= 0 V

-

500

nA

RDS(on)

Drain-Source on Resistance

ID= 4 A, VGS= 10 V

-

0.85

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS >ID(on)*RDS(on)max

ID= 4.4 A

4.9

-

S

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

-

1600

pF

COSS

Output Capacitance

-

350

CRSS

Reverse transfer

Capacitance

-

150

td(on)

Turn-on Delay Time

VDD= 200 V,

ID= 4 A, RGS= 4.7 Ω

-

35

ns

tr

Rise time

-

15

td(off)

Turn-off Delay Time

-

90

tf

Fall Time

-

30

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

IS

Inverse Diode Continuous

Forward Current.

TC = 25°C

-

8

A

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

-

32

VSD

Inverse Diode Forward

voltage

VGS = 0 V, IF = 8 A

-

2

V

Trr

Reverse Recovery Time

IF = 8 A

di/dt = 100 A/µs

-

460

970

ns

Qrr

Reverse Recovery Charge

-

4.2

8.9

µC

类似零件编号 - IRF840

制造商	部件名	数据表	功能描述
Motorola, Inc	IRF840	146Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Vishay Siliconix	IRF840	135Kb / 8P	Power MOSFET S-81290-Rev. B, 16-Jun-08
List of Unclassifed Man...	IRF840	2Mb / 31P	SEMICONDUCTORS
NXP Semiconductors	IRF840	60Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
Suntac Electronic Corp.	IRF840	132Kb / 5P	POWER MOSFET

More results

类似说明 - IRF840

制造商	部件名	数据表	功能描述
STMicroelectronics	IRF620	184Kb / 9P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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