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2N2102 数据表(PDF) 1 Page - Comset Semiconductor

部件名 2N2102
功能描述  MEDIUM POWER AMPLIFIER & SWITCH
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制造商  COMSET [Comset Semiconductor]
网页  http://comset.halfin.com
标志 COMSET - Comset Semiconductor

2N2102 数据表(HTML) 1 Page - Comset Semiconductor

  2N2102 Datasheet HTML 1Page - Comset Semiconductor 2N2102 Datasheet HTML 2Page - Comset Semiconductor 2N2102 Datasheet HTML 3Page - Comset Semiconductor  
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NPN 2N2102
COMSET SEMICONDUCTORS
1/3
MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
They are intended for a wide variety of small-signall and medium power applications
in military and industrial equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
65
V
VCBO
Collector-Base Voltage (IE = 0)
120
V
VCER
Collector-Emitter Voltage (RBE = 10 Ω)
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
1
A
PD
Total Power Dissipation
Tamb= 25°C
1
W
Tcase= 25°C
5
TJ
Junction Temperature
-65 to 200
°C
TStg
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-c
Thermal Resistance, Junction-case
35
°C/ W
Rthj-a
thermal resistance from junction to ambient in free air
175


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