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FDT1600N10ALZ 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FDT1600N10ALZ 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page FDT1600N10ALZ Rev.B0 4 www.fairchildsemi.com Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive Switching Capability -80 -40 0 40 80 120 160 0.92 0.96 1.00 1.04 1.08 1.10 *Notes: 1. VGS = 0V 2. ID = 250μA TJ, Junction Temperature [ o C] -80 -40 0 40 80 120 160 0.3 0.6 0.9 1.2 1.5 1.8 2.1 *Notes: 1. VGS = 10V 2. ID = 2.8A TJ, Junction Temperature [ o C] 0.1 1 10 100 0.01 0.1 1 10 30 1ms 10ms 100ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 o C 2. TJ = 150 o C 3. Single Pulse DC 25 50 75 100 125 150 0 1 2 3 4 5 6 V GS = 5V TC, Case Temperature [ o C] V GS = 10V R θJC= 12 oC/W 0 20 406080 100 0 0.05 0.10 0.15 0.20 0.25 V DS, Drain to Source Voltage [V] 0.01 0.1 1 1 2 3 TJ = 25 o C TJ = 125 o C tAV, Time In Avalanche [ms] |
类似零件编号 - FDT1600N10ALZ |
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类似说明 - FDT1600N10ALZ |
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