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FDS89161 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDS89161 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDS89161 Rev. C2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 67 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA2 3 4 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2.7 A 86 105 m Ω VGS = 6 V, ID = 2.1 A 120 171 VGS = 10 V, ID = 2.7 A, TJ = 125 °C 144 176 gFS Forward Transconductance VDS = 10 V, ID = 2.7 A 5 S Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1MHz 158 210 pF Coss Output Capacitance 43 58 pF Crss Reverse Transfer Capacitance 3 5 pF Rg Gate Resistance 1 Ω td(on) Turn-On Delay Time VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω 4.2 10 ns tr Rise Time 1.3 10 ns td(off) Turn-Off Delay Time 7.3 15 ns tf Fall Time 1.9 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 50 V, ID = 2.7 A 34.1 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 1.7 2.4 Qgs Gate to Source Charge 0.8 nC Qgd Gate to Drain “Miller” Charge 0.8 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.7 A (Note 2) 0.85 1.3 V VGS = 0 V, IS = 2 A (Note 2) 0.82 1.2 trr Reverse Recovery Time IF = 2.7 A, di/dt = 100 A/μs 34 54 ns Qrr Reverse Recovery Charge 21 34 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. b) 135°C/W when mounted on a minimun pad a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper |
类似零件编号 - FDS89161 |
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类似说明 - FDS89161 |
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