数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

FDS89161 数据表(PDF) 2 Page - Fairchild Semiconductor

部件名 FDS89161
功能描述  Dual N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 105 m廓
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

FDS89161 数据表(HTML) 2 Page - Fairchild Semiconductor

  FDS89161 Datasheet HTML 1Page - Fairchild Semiconductor FDS89161 Datasheet HTML 2Page - Fairchild Semiconductor FDS89161 Datasheet HTML 3Page - Fairchild Semiconductor FDS89161 Datasheet HTML 4Page - Fairchild Semiconductor FDS89161 Datasheet HTML 5Page - Fairchild Semiconductor FDS89161 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
©2011 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FDS89161 Rev. C2
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
67
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA2
3
4
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 2.7 A
86
105
m
Ω
VGS = 6 V, ID = 2.1 A
120
171
VGS = 10 V, ID = 2.7 A, TJ = 125 °C
144
176
gFS
Forward Transconductance
VDS = 10 V, ID = 2.7 A
5
S
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1MHz
158
210
pF
Coss
Output Capacitance
43
58
pF
Crss
Reverse Transfer Capacitance
3
5
pF
Rg
Gate Resistance
1
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 2.7 A,
VGS = 10 V, RGEN = 6 Ω
4.2
10
ns
tr
Rise Time
1.3
10
ns
td(off)
Turn-Off Delay Time
7.3
15
ns
tf
Fall Time
1.9
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 2.7 A
34.1
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 5 V
1.7
2.4
Qgs
Gate to Source Charge
0.8
nC
Qgd
Gate to Drain “Miller” Charge
0.8
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.7 A
(Note 2)
0.85
1.3
V
VGS = 0 V, IS = 2 A
(Note 2)
0.82
1.2
trr
Reverse Recovery Time
IF = 2.7 A, di/dt = 100 A/μs
34
54
ns
Qrr
Reverse Recovery Charge
21
34
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V.
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper


类似零件编号 - FDS89161

制造商部件名数据表功能描述
logo
Guangdong Kexin Industr...
FDS89161 KEXIN-FDS89161 Datasheet
2Mb / 5P
   N-Channel Enhancement MOSFET
logo
Fairchild Semiconductor
FDS89161LZ FAIRCHILD-FDS89161LZ Datasheet
251Kb / 7P
   Max rDS(on) = 105 m廓 at VGS = 10 V, ID = 2.7 A
More results

类似说明 - FDS89161

制造商部件名数据表功能描述
logo
Fairchild Semiconductor
FDN8601 FAIRCHILD-FDN8601 Datasheet
163Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 2.7 A, 109 m
FDS89141 FAIRCHILD-FDS89141 Datasheet
245Kb / 6P
   Dual N-Channel PowerTrench짰 MOSFET 100 V, 3.5 A, 62 m廓
FDC8602 FAIRCHILD-FDC8602 Datasheet
257Kb / 7P
   Dual N-Channel PowerTrench짰 MOSFET 100 V, 1.2 A, 350 m廓
FDMS7650DC FAIRCHILD-FDMS7650DC Datasheet
252Kb / 8P
   N-Channel Dual CoolTM PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓
FDT1600N10ALZ FAIRCHILD-FDT1600N10ALZ Datasheet
291Kb / 9P
   N-Channel PowerTrench짰 MOSFET 100 V, 5.6 A, 160 m廓
FDD86102LZ FAIRCHILD-FDD86102LZ_12 Datasheet
372Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
FDD86110 FAIRCHILD-FDD86110 Datasheet
257Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 50 A, 10.2 m廓
logo
ON Semiconductor
FDP085N10A ONSEMI-FDP085N10A Datasheet
3Mb / 10P
   N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓
November-2017, Rev. 3
logo
Fairchild Semiconductor
FDS86140 FAIRCHILD-FDS86140 Datasheet
255Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 11.2 A, 9.8 m廓
logo
Diodes Incorporated
FDD86102LZ DIODES-FDD86102LZ Datasheet
372Kb / 6P
   N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
More results


Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com