FDS6670AS

™

General Description

The FDS6670AS is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

and low gate charge.

The FDS6670AS

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology.

Applications

x DC/DC converter

x Low side notebook

Features

x Includes SyncFET Schottky body diode

x Low gate charge (27nC typical)

x High performance trench technology for extremely low

x High power and current handling capability

S

D

S

S

SO-8

D

D

D

G

4

3

2

1

5

6

7

8

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

r20

V

Drain Current

– Continuous

(Note 1a)

13.5

A

– Pulsed

50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

1

W

Operating and Storage Junction Temperature Range

–55 to +150

qC

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

qC/W

Thermal Resistance, Junction-to-Case

(Note 1)

25

qC/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6670AS

FDS6670AS

13’’

12mm

2500 units

x

RoHS Compliant

©2010 Fairchild Semiconductor Corporation

FDS6670AS Rev.

C1

www.fairchildsemi.com

1

July 2010