FDD86102LZ_12 datasheet(3/6 Pages) FAIRCHILD

部件名	FDD86102LZ

功能描述	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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3 / 6 page

FDD86102LZ Rev.C1

www.fairchildsemi.com

3

Typical Characteristics T

J = 25 °C unless otherwise noted

Figure 1.

01

23

45

0

10

20

30

40

VGS = 3.5 V

VGS = 3 V

VGS = 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 2.5 V

VGS = 4.5 V

V

DS, DRAIN TO SOURCE VOLTAGE (V)

On-Region Characteristics

Figure2.

0

10203040

0

1

2

3

4

5

VGS = 2.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3.5 V

VGS = 3 V

VGS = 10 V

NormalizedOn-Resistance

vs Drain Current and Gate Voltage

Figure3. Normalized On- Resistance

-75

-50

-25

0

25

50

75

100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 8 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (oC)

vs Junction Temperature

Figure 4.

24

6

8

10

0

30

60

90

120

TJ = 125 oC

ID = 8 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

On-Resistance vs Gate to

Source Voltage

Figure 5. Transfer Characteristics

01

2

3

45

0

10

20

30

40

TJ = 25 oC

TJ = 150 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

1

10

50

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

Source to Drain Diode

Forward Voltage vs Source Current

类似零件编号 - FDD86102LZ_12

制造商	部件名	数据表	功能描述
Diodes Incorporated	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
Inchange Semiconductor ...	FDD86102LZ	282Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	FDD86102LZ	960Kb / 8P	N-Channel 100-V (D-S) MOSFET
BYCHIP ELECTRONICS CO.,...	FDD86102LZ	690Kb / 4P	N-channel Enhancement Mode Power MOSFET

More results

类似说明 - FDD86102LZ_12

制造商	部件名	数据表	功能描述
Diodes Incorporated	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
Fairchild Semiconductor	FDT1600N10ALZ	291Kb / 9P	N-Channel PowerTrench짰 MOSFET 100 V, 5.6 A, 160 m廓
Fairchild Semiconductor	FDD86110	257Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 50 A, 10.2 m廓
ON Semiconductor	FDP085N10A	3Mb / 10P	N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓 November-2017, Rev. 3
Fairchild Semiconductor	FDS86140	255Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 11.2 A, 9.8 m廓
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	FDPF3860TYDTU	589Kb / 8P	N-Channel PowerTrench짰 MOSFET 100 V, 20 A, 38.2 m廓
	FDMS86103L	279Kb / 7P	N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m廓
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