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BC847BS 数据表(PDF) 1 Page - Fairchild Semiconductor

部件名 BC847BS
功能描述  NPN Multi-chip General Purpose Amplifier
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
标志 FAIRCHILD - Fairchild Semiconductor

BC847BS 数据表(HTML) 1 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC847BS Rev. A
June 2007
BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics * T
a = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCES
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current (DC)
100
mA
TJ, TSTG
Junction Temperature and Storage Temperature
-55 ~ +150
°C
Symbol
Characteristic
Max
Units
PD
Total Device Dissipation
Derate above 25℃
210
1.6
mW
mW/℃
R θ JA
Thermal Resistance, Junction to Ambient
625
℃/W
C1
B2
E1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Pin #1
B1
C2
E2
SC70-6
Mark: .1F
Dual NPN Signal Transister


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