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FDD4141 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD4141 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  www.fairchildsemi.com 2 ©2010 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V -40 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = -250μA, referenced to 25°C -29 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -32V, VGS = 0V -1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -1 -1.8 -3 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = -250μA, referenced to 25°C 5.8 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -10V, ID = -12.7A 10.1 12.3 m Ω VGS = -4.5V, ID = -10.4A 14.5 18.0 VGS = -10V, ID = -12.7A, TJ = 125°C 15.3 18.7 gFS Forward Transconductance VDS = -5V, ID = -12.7A 38 S Dynamic Characteristics Ciss Input Capacitance VDS = -20V, VGS = 0V, f = 1MHz 2085 2775 pF Coss Output Capacitance 360 480 pF Crss Reverse Transfer Capacitance 210 310 pF Rg Gate Resistance f = 1MHz 4.6 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = -20V, ID = -12.7A, VGS = -10V, RGEN = 6Ω 10 19 ns tr Rise Time 7 13 ns td(off) Turn-Off Delay Time 38 60 ns tf Fall Time 15 27 ns Qg Total Gate Charge VGS = 0V to -10V VDD = -20V, ID = -12.7A 36 50 nC Qg Total Gate Charge VGS = 0V to -5V 19 27 nC Qgs Gate to Source Charge 7 nC Qgd Gate to Drain “Miller” Charge 8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -12.7A (Note 2) -0.8 -1.2 V trr Reverse Recovery Time IF = -12.7A, di/dt = 100A/μs 29 44 ns Qrr Reverse Recovery Charge 26 40 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. 52°C/W when mounted on a 1 in2 pad of 2 oz copper 100°C/W when mounted on a minimum pad. a) b) |
类似零件编号 - FDD4141_10 |
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类似说明 - FDD4141_10 |
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