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3N65KL-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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3N65KL-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 3N65K Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-837.A ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) EAS 45 mJ Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 PD 75 W TO-220F/TO-220F1 34 TO-251/TO-252 50 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220F θJA 62.5 °C/W TO-252 110 Junction to Case TO-220F θJC 3.68 °C/W TO-252 2.5 |
类似零件编号 - 3N65KL-TN3-R |
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类似说明 - 3N65KL-TN3-R |
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