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UF3N30G-TM3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UF3N30G-TM3-R 数据表(HTML) 1 Page - Unisonic Technologies |
1 / 3 page UNISONIC TECHNOLOGIES CO., LTD UF3N30 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-826.a 3A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UF3N30L-TM3-R UF3N30G-TM3-R TO-251 G D S Tape Reel UF3N30L-TN3-R UF3N30G- TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
类似零件编号 - UF3N30G-TM3-R |
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类似说明 - UF3N30G-TM3-R |
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