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9337CKE100M 数据表(PDF) 1 Page - RF Micro Devices

部件名 9337CKE100M
功能描述  280W GaN WIDEBAND PULSED POWER
Download  11 Pages
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制造商  RFMD [RF Micro Devices]
网页  http://www.rfmd.com
标志 RFMD - RF Micro Devices

9337CKE100M 数据表(HTML) 1 Page - RF Micro Devices

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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Ordering Information
BiFET HBT
RF IN
VG
Pin 1 (CUT)
RF OUT
VD
Pin 2
GND
BASE
RF3928
280W GaN WIDEBAND PULSED POWER
AMPLIFIER
The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band
pulsed radar, Air Traffic Control and Surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high-performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged
ceramic package. This package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of simple, optimized matching networks
external to the package that provide wide band gain and power performance in a
single amplifier.
Features
Wideband Operation 2.8GHz to
3.4GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100
s to 500s Pulse Width
Integrated Matching
Components for High Terminal
Impedances
50V Operation Typical
Performance
Pulsed Output Power 280W
Small Signal Gain 12dB
Drain Efficiency 52%
-40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
DS120508
Package: Hermetic 2-Pin, Flanged Ceramic
RF3928280W
GaN WIDE-
BAND PULSED
POWER AMPLI-
FIER
RF3928S2
2-Piece sample bag
RF3928SB
5-Piece bag
RF3928SQ
25-Piece bag
RF3928SR
50 Pieces on 7” short reel
RF3928TR13
250 Pieces on 13” reel
RF3928PCBA-410
Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V
operation


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