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9337CKE100M 数据表(PDF) 1 Page - RF Micro Devices |
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9337CKE100M 数据表(HTML) 1 Page - RF Micro Devices |
1 / 11 page 1 of 11 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Ordering Information BiFET HBT RF IN VG Pin 1 (CUT) RF OUT VD Pin 2 GND BASE RF3928 280W GaN WIDEBAND PULSED POWER AMPLIFIER The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single pack- age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide band gain and power performance in a single amplifier. Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100 s to 500s Pulse Width Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance Pulsed Output Power 280W Small Signal Gain 12dB Drain Efficiency 52% -40°C to 85°C Operating Temperature Applications Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers DS120508 Package: Hermetic 2-Pin, Flanged Ceramic RF3928280W GaN WIDE- BAND PULSED POWER AMPLI- FIER RF3928S2 2-Piece sample bag RF3928SB 5-Piece bag RF3928SQ 25-Piece bag RF3928SR 50 Pieces on 7” short reel RF3928TR13 250 Pieces on 13” reel RF3928PCBA-410 Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V operation |
类似零件编号 - 9337CKE100M |
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类似说明 - 9337CKE100M |
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