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AM29F160DT75 数据表(PDF) 3 Page - SPANSION |
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AM29F160DT75 数据表(HTML) 3 Page - SPANSION |
3 / 47 page DATA SHEET This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# Am29F160D_00 Revision: D Amendment: 10 Issue Date: April 23, 2010 Am29F160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 Volt single power supply operation — Minimizes system-level power requirements ■ High performance — Access times as fast as 70 ns ■ Manufactured on 0.23 µm process technology ■ CFI (Common Flash Interface) compliant — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices ■ Ultra low power consumption (typical values at 5 MHz) — 15 mA typical active read current — 35 mA typical erase/program current — 300 nA typical standby mode current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: — Hardware method of locking a sector to prevent program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top boot or bottom boot configurations available ■ Minimum 1,000,000 write cycle guarantee per sector ■ 20-year data retention at 125° C — Reliable operation for the life of the system ■ Package options — 48-pin TSOP ■ Compatible with JEDEC standards — Pinout and software compatible with single- power supply Flash — Superior inadvertent write protection ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Hardware reset pin (RESET#) — Hardware method to reset the device for reading array data ■ WP# input pin —At VIL, protects the 16 Kbyte boot sector from erasure regardless of sector protect/unprotect status —At VIH, allows removal of boot sector protection ■ Program and Erase Performance — Sector erase time: 1 s typical for each 64 Kbyte sector — Byte program time: 7 µs typical |
类似零件编号 - AM29F160DT75 |
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类似说明 - AM29F160DT75 |
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