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STPS20H100C 数据表(PDF) 4 Page - STMicroelectronics

部件名 STPS20H100C
功能描述  100 V power Schottky rectifier
Download  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS20H100C 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
STPS20H100C
4/11
Doc ID 5386 Rev 7
Figure 1.
Average forward power dissipation
versus average forward current
(per diode)
Figure 2.
Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
P
(W)
F(AV)
02
46
8
10
12
0
2
4
6
8
T
δ=tp/T
tp
I
(A)
F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
I
(A)
F(AV)
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
TO-220FPAB
TO-220AB
R=R
th(j-a)
th(j-c)
R
=15°C/W
th(j-a)
R
=40°C/W
th(j-a)
T
(°C)
amb
T
δ=tp/T
tp
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
P(tp)
P
(1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
P(T )
P
(25 °C)
ARM
j
ARM
T (°C)
j
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
160
180
200
IM
t
δ=0.5
t(s)
T =50°C
C
T =75°C
C
T =125°C
C
TO-220AB, D PAK, I PAK
22
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
140
I (A)
M
IM
t
δ=0.5
t(s)
T =50°C
j
T =75°C
j
T =125°C
j
TO-220FPAB


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