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STPS20H100C 数据表(PDF) 4 Page - STMicroelectronics |
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STPS20H100C 数据表(HTML) 4 Page - STMicroelectronics |
4 / 11 page Characteristics STPS20H100C 4/11 Doc ID 5386 Rev 7 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 0.5, per diode) P (W) F(AV) 02 46 8 10 12 0 2 4 6 8 T δ=tp/T tp I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 I (A) F(AV) 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 TO-220FPAB TO-220AB R=R th(j-a) th(j-c) R =15°C/W th(j-a) R =40°C/W th(j-a) T (°C) amb T δ=tp/T tp Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 P(tp) P (1µs) ARM ARM t (µs) p 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) I (A) M 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 120 140 160 180 200 IM t δ=0.5 t(s) T =50°C C T =75°C C T =125°C C TO-220AB, D PAK, I PAK 22 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 120 140 I (A) M IM t δ=0.5 t(s) T =50°C j T =75°C j T =125°C j TO-220FPAB |
类似零件编号 - STPS20H100C_11 |
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类似说明 - STPS20H100C_11 |
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