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STP4435A 数据表(PDF) 1 Page - Stanson Technology |
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STP4435A 数据表(HTML) 1 Page - Stanson Technology |
1 / 6 page STP4435A P Channel Enhancement Mode MOSFET - 10A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. FEATURE -30V/-9.2A, RDS(ON) = 22mΩ (Typ.) @VGS =-10V -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PIN CONFIGURATION SOP-8 PART MARKING SOP-8 STP4435A 2007. V1 |
类似零件编号 - STP4435A |
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类似说明 - STP4435A |
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