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STP4435A 数据表(PDF) 1 Page - Stanson Technology

部件名 STP4435A
功能描述  STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology

STP4435A 数据表(HTML) 1 Page - Stanson Technology

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STP4435A
P Channel Enhancement Mode MOSFET
-
10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
DESCRIPTION
STP4435A is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
FEATURE
-30V/-9.2A, RDS(ON) = 22mΩ (Typ.)
@VGS =-10V
-30V/-7.0A, RDS(ON) = 30mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
STP4435A 2007. V1


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