Vishay Siliconix

Si7252DP

New Product

Document Number: 62634

S12-2186-Rev. A, 10-Sep-12

www.vishay.com

1

This document is subject to change without notice.

Dual N-Channel 100 V (D-S) MOSFET

FEATURES

•

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Primary Side Switching

•

Synchronous Rectification

•

DC/AC Inverters

Notes:

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 85 °C/W.

PRODUCT SUMMARY

a

100

36.7

12.2 nC

35.7

33.9

Ordering Information:

Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S1

G1

S2

G2

D1

D1

D2

D2

6.15 mm

5.15 mm

Bottom View

PowerPAK SO-8

N-Channel MOSFET

N-Channel MOSFET

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

± 20

36.7

A

29.2

Pulsed Drain Current (t = 300 µs)

80

Continuous Source-Drain Diode Current

38

Single Pulse Avalanche Current

L = 0.1 mH

20

Single Pulse Avalanche Energy

20

mJ

Maximum Power Dissipation

46

W

29

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 10 s

26

35

°C/W

Maximum Junction-to-Case (Drain)

Steady State

2.2

2.7