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SI7252DP 数据表(PDF) 1 Page - Vishay Siliconix |
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SI7252DP 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7252DP New Product Document Number: 62634 S12-2186-Rev. A, 10-Sep-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Dual N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary Side Switching • Synchronous Rectification • DC/AC Inverters Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile ( www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) a Qg (Typ.) 100 0.017 at VGS = 10 V 36.7 12.2 nC 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 Ordering Information: Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK SO-8 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 36.7 A TC = 85 °C 29.2 TA = 25 °C 10.1b, c TA = 85 °C 8b, c Pulsed Drain Current (t = 300 µs) IDM 80 Continuous Source-Drain Diode Current TC = 25 °C IS 38 TA = 25 °C 2.9b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 46 W TC = 85 °C 29 TA = 25 °C 3.5b, c TA = 85 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 10 s RthJA 26 35 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.2 2.7 |
类似零件编号 - SI7252DP |
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类似说明 - SI7252DP |
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