SI1489EDH datasheet(3/12 Pages) VISHAY

部件名	SI1489EDH

功能描述	P-Channel 8 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 67491

S11-0610-Rev. A, 04-Apr-11

www.vishay.com

3

Vishay Siliconix

Si1489EDH

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current

0.000

1.000

2.000

3.000

4.000

5.000

6.000

0

2

4

6

8

10

V

GS - Gate-Source Voltage (V)

T

J = 25 °C

0

2

4

6

8

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V

DS - Drain-to-Source Voltage (V)

V

GS = 1 V

V

GS = 5 V thru 2 V

V

GS = 1.5 V

0.00

0.04

0.08

0.12

0.16

0.20

0

2

4

6

8

I

D -Drain Current (A)

V

GS = 1.2 V

V

GS = 1.5 V

V

GS = 2.5 V

V

GS = 1.8 V

V

GS = 4.5 V

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Gate Charge

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0

1

2

3

4

5

0.0

0.3

0.6

0.9

1.2

1.5

V

GS - Gate-to-Source Voltage (V)

T

C = 25 °C

T

C = - 55 °C

T

C = 125 °C

0

1

2

3

4

5

6

0

3

6

9

12

15

Q

g - Total Gate Charge (nC)

V

DS = 6.4 V

V

DS = 4 V

V

DS = 2 V

I

D = 7.4 A

类似零件编号 - SI1489EDH

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SI1489EDH-T1-GE3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET

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