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KMA3D6N20SA 数据表(PDF) 2 Page - KEC(Korea Electronics) |
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KMA3D6N20SA 数据表(HTML) 2 Page - KEC(Korea Electronics) |
2 / 5 page 2012. 8. 22 2/5 KMA3D6N20SA Revision No : 2 ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS IDS=250μ A, VGS=0V, 20 - - V Drain Cut-off Current IDSS VGS=0V, VDS=16V - - 1 μA Gate Leakage Current IGSS VGS=±10V, VDS=0V - - ±100 nA Gate Threshold Voltage Vth VDS=VGS, ID=250μ A 0.6 0.9 1.5 V Drain-Source ON Resistance RDS(ON)* VGS=4.5V, ID=2.5A - 32 45 m Ω VGS=2.5V, ID=2A - 50 65 On-State Drain Current ID(ON)* VGS=4.5V, VDS=5V 10 - - A Forward Transconductance gfs* VDS=5V, ID=3A - 8 - S Dynamic Input Capaclitance Ciss VDS=15V, VGS= 0V, f=1MHz, - 437 - pF Ouput Capacitance Coss - 87 - Reverse Transfer Capacitance Crss - 51 - Total Gate Charge Qg* VDS=10V, VGS=4.5V, ID=3.5A - 6.6 - nC Gate-Source Charge Qgs* - 0.8 - Gate-Drain Charge Qgd* - 1.85 - Turn-On Delay Time td(on)* VDD=10V, VGS=4.5V ID=1A, RG=6Ω(NOTE 1) - 13 - ns Turn-On Rise Time tr* - 19 - Turn-Off Delay Time td(off)* - 85 - Turn-Off Fall Time tf* - 47 - Source-Drain Diode Ratings Source-Drain Forward Voltage VSDF* VGS=0V, IDR=1.25A - 0.81 1.2 V NOTE 1> * : Pulse Test : Pulse width <300 ㎲ , Duty cycle < 2% |
类似零件编号 - KMA3D6N20SA_12 |
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类似说明 - KMA3D6N20SA_12 |
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