O

Parameter

Symbol

Unit

Repetitive peak reverse voltage

Continuous reverse voltage

RMS voltage

Forward rectified current

Maximum forward voltage

Max. Forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC method)

Max.Reverse current

Typ. Thermal resistance

Typ. Diode Junction capacitance (Note 1)

Reverse Voltage: 20 to 100 Volts

Forward Current: 2.0 Amp

RoHS Device

Dimensions in inches and (millimeter)

CDBMT220-HF Thru. CDBMT2100-HF

Page 1

QW-JB026

Low Profile SMD Schottky Barrier Rectifiers

REV: A

Comchip Technology CO., LTD.

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.055(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

CDBMT

220-HF

CDBMT

240-HF

CDBMT

260-HF

CDBMT

280-HF

CDBMT

2100-HF

20

20

14

40

40

28

60

60

42

2.0

0.70

50

0.5

10

85

80

80

56

100

100

70

V

V

V

A

V

A

mA

O

C/W

0.50

0.85

Note :

Operating temperature

Storage temperature range

-65 to +175

-55 to +125

-55 to +150

160

P

F

CDBMT

230-HF

30

30

21

CDBMT

250-HF

50

50

35

SMD Diodes Specialist

1. F=1MHz and applied 4V DC reverse voltage

0.031(0.8) Typ.

(Junction to ambient)

Features

Mechanical data

-Case: Molded plastic, SOD-123H/MINI SMA

-Terminals: Solderable per MIL-STD-750, Method 2026.

-Polarity: Indicated by cathode band.

-Weight: 0.011 grams approx.

-Mounting Position: any

-Epoxy: UL94-V0 rated flame retardant.

Halogen Free

-Low power loss,high efficiency.

-High current capability,low forward voltage drop.

-High surge capability.

-Guarding for overvoltage protection.

-Ultra high-speed switching.

-Excellent power dissipation offers better reverse

leakage current and thermal resistance.

-Low profile package is 40% thinner than standards

SOD-123.

-Silicon epitaxial planar chip,metal silicon junction.

-Lead-free part meets environmental standards of

MIL-STD-19500/228