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CSD17327Q5A 数据表(PDF) 2 Page - Texas Instruments |
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CSD17327Q5A 数据表(HTML) 2 Page - Texas Instruments |
2 / 12 page CSD17327Q5A SLPS332 – JUNE 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA 30 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/-10V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA 1.1 1.6 2.0 V VGS = 4.5V, IDS = 11A 12.5 15.5 m Ω RDS(on) Drain to Source On Resistance VGS = 8V, IDS = 11A 9.9 12.2 m Ω gfs Transconductance VDS = 15V, IDS = 11A 44 S Dynamic Characteristics Ciss Input Capacitance 422 506 pF VGS = 0V, VDS = 15V, Coss Output Capacitance 286 343 pF f = 1MHz Crss Reverse Transfer Capacitance 26 33 pF RG Series Gate Resistance 4.7 Ω Qg Gate Charge Total (4.5V) 2.8 3.4 nC Qgd Gate Charge Gate to Drain 0.8 nC VDS = 15V, IDS = 11A Qgs Gate Charge Gate to Source 1.2 nC Qg(th) Gate Charge at Vth 0.6 nC Qoss Output Charge VDS = 13V, VGS = 0V 6.8 nC td(on) Turn On Delay Time 5.6 ns tr Rise Time 8.2 ns VDS = 15V, VGS = 4.5V, IDS = 11A,RG = 2Ω td(off) Turn Off Delay Time 9.8 ns tf Fall Time 3.2 ns Diode Characteristics VSD Diode Forward Voltage ISD = 11A, VGS = 0V 0.85 1 V Qrr Reverse Recovery Charge 10.5 nC VDS= 13V, IF = 11A, di/dt = 300A/μs trr Reverse Recovery Time 14.6 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case(1) 1.9 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 51 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Copyright © 2011, Texas Instruments Incorporated |
类似零件编号 - CSD17327Q5A |
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类似说明 - CSD17327Q5A |
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