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CSD17327Q5A 数据表(PDF) 2 Page - Texas Instruments

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部件名 CSD17327Q5A
功能描述  30V, N-Channel NexFET??Power MOSFETs
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD17327Q5A 数据表(HTML) 2 Page - Texas Instruments

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CSD17327Q5A
SLPS332
– JUNE 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250μA
30
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/-10V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
1.1
1.6
2.0
V
VGS = 4.5V, IDS = 11A
12.5
15.5
m
RDS(on)
Drain to Source On Resistance
VGS = 8V, IDS = 11A
9.9
12.2
m
gfs
Transconductance
VDS = 15V, IDS = 11A
44
S
Dynamic Characteristics
Ciss
Input Capacitance
422
506
pF
VGS = 0V, VDS = 15V,
Coss
Output Capacitance
286
343
pF
f = 1MHz
Crss
Reverse Transfer Capacitance
26
33
pF
RG
Series Gate Resistance
4.7
Qg
Gate Charge Total (4.5V)
2.8
3.4
nC
Qgd
Gate Charge Gate to Drain
0.8
nC
VDS = 15V, IDS = 11A
Qgs
Gate Charge Gate to Source
1.2
nC
Qg(th)
Gate Charge at Vth
0.6
nC
Qoss
Output Charge
VDS = 13V, VGS = 0V
6.8
nC
td(on)
Turn On Delay Time
5.6
ns
tr
Rise Time
8.2
ns
VDS = 15V, VGS = 4.5V,
IDS = 11A,RG = 2Ω
td(off)
Turn Off Delay Time
9.8
ns
tf
Fall Time
3.2
ns
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 11A, VGS = 0V
0.85
1
V
Qrr
Reverse Recovery Charge
10.5
nC
VDS= 13V, IF = 11A, di/dt = 300A/μs
trr
Reverse Recovery Time
14.6
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case(1)
1.9
°C/W
RθJA
Thermal Resistance Junction to Ambient(1)(2)
51
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
Copyright
© 2011, Texas Instruments Incorporated


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