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CSD16406Q3 数据表(PDF) 2 Page - Texas Instruments

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部件名 CSD16406Q3
功能描述  N-Channel NexFET??Power MOSFETs
Download  11 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD16406Q3 数据表(HTML) 2 Page - Texas Instruments

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CSD16406Q3
SLPS202A – AUGUST 2009 – REVISED SEPTEMBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
mA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16/-12V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
1.4
1.8
2.2
V
VGS = 4.5V, ID = 20A
5.9
7.4
m
RDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 20A
4.2
5.3
m
gfs
Transconductance
VDS = 15V, ID = 20A
53
S
Dynamic Characteristics
CISS
Input Capacitance
840
1100
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V, f = 1MHz
680
950
pF
CRSS
Reverse Transfer Capacitance
57
80
pF
Rg
Series Gate Resistance
1.2
2.4
Qg
Gate Charge Total (4.5V)
5.8
8.1
nC
Qgd
Gate Charge Gate to Drain
1.5
nC
VDS = 12.5V, ID = 20A
Qgs
Gate Charge Gate to Source
2.5
nC
Qg(th)
Gate Charge at Vth
1.5
nC
QOSS
Output Charge
VDS = 13.6V, VGS = 0V
13.9
nC
td(on)
Turn On Delay Time
7.3
ns
tr
Rise Time
12.9
ns
VDS = 12.5V, VGS = 4.5V ID = 20A
RG = 2Ω
td(off)
Turn Off Delay Time
8.5
ns
tf
Fall Time
4.8
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 20A, VGS = 0V
0.85
1.0
V
Qrr
Reverse Recovery Charge
VDD = 13.6V, IF = 20A, di/dt = 300A/ms
18
nC
trr
Reverse Recovery Time
VDD = 13.6V, IF = 20A, di/dt = 300A/ms
22
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
R qJC
Thermal Resistance Junction to Case(1)
2.7
°C/W
R qJA
Thermal Resistance Junction to Ambient(1) (2)
58
°C/W
(1)
RqJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.06 inch thick FR4 board. RqJC is
specified by design while RqJA is determined by the user’s board design.
(2)
Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.
2
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16406Q3


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