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CD74HCT365QDRQ1 数据表(PDF) 4 Page - Texas Instruments |
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CD74HCT365QDRQ1 数据表(HTML) 4 Page - Texas Instruments |
4 / 12 page CD74HC365-Q1, CD74HC366-Q1, CD74HCT365-Q1 SCHS382 – JANUARY 2010 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) PARAMETER CONDITIONS VALUE VCC DC supply voltage -0.5V to +7V IIK DC input diode current, VI < -0.5V or VI > VCC + 0.5V ±20mA IOK DC output diode current VO < -0.5V or VO > VCC + 0.5V ±20mA DC drain current per output ±35mA IO VO > -0.5V or VO < VCC + 0.5V DC output source or sink current per output pin ±25mA ICC DC VCC or ground current ±50mA Human-Body Model 1.5kV ESD Electrostatic discharge Machine Model 200V Field_Induced_Charged Device Model 250V Latch up Class I (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER MIN MAX UNIT qJA Thermal resistance (typical)(1) D (SOIC) package 73 °C/W JT Maximum junction temperature 150 °C Tstg Maximum storage temperature range –65 150 °C Maximum lead temperature (soldering 10s) (SOIC - lead tips only) 300 °C (1) The package thermal impedance is calculated in accordance with JESD 51-7. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT HC Types 2 6 VCC Supply voltage V HCT Types 4.5 5.5 VI DC Input voltage 0 VCC V VO DC Output voltage 0 VCC V TA Operating free-air temperature –40 125 °C 2 V 1000 Input Rise and Fall Time 4.5 V 500 ns 6 V 400 4 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CD74HC365-Q1 CD74HC366-Q1 CD74HCT365-Q1 |
类似零件编号 - CD74HCT365QDRQ1 |
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类似说明 - CD74HCT365QDRQ1 |
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