SB1100A-G datasheet(1/3 Pages) COMCHIP

部件名	SB1100A-G

功能描述	Leaded Schottky Barrier Rectifiers

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制造商	COMCHIP [Comchip Technology]

网页	http://www.comchiptech.com

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Leaded Schottky Barrier Rectifiers

QW-BB040

Page 1

REV:A

Electrical Characteristics (at TA=25°C unless otherwise noted)

Voltage: 20 to 100 V

Current: 1.0 A

RoHS Device

SB120-G Thru. SB1100-G

Dimensions in inches and (millimeter)

DO-41

Comchip Technology CO., LTD.

1.0(25.4) Min.

.205(5.2)

.160(4.1)

.107(2.7)

.080(2.0)

.034(0.86)

.028(0.70)

Features

Mechanical data

-Low drop down voltage.

-Metal-Semiconductor junction with guard ring

-High surge current capability

-Silicon epitaxial planar chips.

-Lead-free part, meet RoHS requirements.

-Epoxy: UL94-V0 rated flame retardant

-Case: Molded plastic body DO-41

-Terminals: Solderable per MIL-STD-750 Method 2026

-Polarity: Color band denotes cathode end

-Mounting Position: Any

-Weight: 0.34grams

-For use in low voltage, high efficiency inverters,

free wheeling, and polarity protection applications

Parameter

Symbol

Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=75°C, See Figure 1

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

(JEDEC method) TL=110°C

Maximum f

1.0A

orward voltage at

Maximum DC reverse current

TA=25°C

At rated DC blocking voltage

TA=100°C

Typical junction capacitance (Note 1)

Operating junction temperature range

VRRM

VRMS

VDC

I(AV)

IFSM

VF

IR

CJ

TJ

-55 to +150

V

A

V

pF

°C/W

mA

NOTES:

1.

.

Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

Storage temperature range

2. Thermal resistance junction to ambient and junction to lead.

TSTG

°C

Typical t

(Note 2)

hermal resistance

RθJA

RθJL

20

40

45

50

60

80

100

14

28

30

35

42

56

70

1.0

-55 to +150

-55 to +125

5

10

50.0

30.0

0.5

0.50

0.85

0.70

110

30

SB

120-G

SB

140-G

SB

145-G

SB

150-G

SB

160-G

SB

1100-G

SB

180-G

Comchip

S M D D i o d e S p e c i a l i s t

80

30

Ratings at Ta=25°C unless otherwise noted.

类似零件编号 - SB1100A-G

制造商	部件名	数据表	功能描述
Pan Jit International I...	SB1100	45Kb / 2P	1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 50 to 100 Volts CURRENT - 1.0 Ampere)
Nanjing International G...	SB1100	295Kb / 2P	1.0 AMP SCHOTTKY BARRIER RECTIFIERS
DAESAN ELECTRONIC CORP.	SB1100	356Kb / 2P	CURRENT 1.0Ampere VOLTAGE 20 to 100 Volts
Guangdong Kexin Industr...	SB1100	797Kb / 2P	Schottky Diodes
Transys Electronics	SB1100	145Kb / 2P	1 AMPERE SCHOTTKY BARRIER RECTIFIERS

More results

类似说明 - SB1100A-G

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