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SB350T-G 数据表(PDF) 1 Page - Comchip Technology

部件名 SB350T-G
功能描述  Leaded Schottky Barrier Rectifiers
Download  3 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

SB350T-G 数据表(HTML) 1 Page - Comchip Technology

  SB350T-G Datasheet HTML 1Page - Comchip Technology SB350T-G Datasheet HTML 2Page - Comchip Technology SB350T-G Datasheet HTML 3Page - Comchip Technology  
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Leaded Schottky Barrier Rectifiers
QW-BB024
Page 1
REV:B
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Voltage: 20 to 100 V
Current: 3.0 A
RoHS Device
SB320-G Thru. SB3100-G
Dimensions in inches and (millimeter)
DO-201AD
Comchip Technology CO., LTD.
1.0(25.4) Min.
1.0(25.4) Min.
0.375(9.5)
0.287(7.3)
0.210(5.3)
0.189(4.8)
0.052(1.30)
0.048(1.20)
Features
Mechanical data
-Low drop down voltage.
-Metal-Semiconductor junction with guard ring
-High surge current capability
-Silicon epitaxial planar chips.
-Lead-free part, meet RoHS requirements.
-Epoxy: UL94-V0 rated flame retardant
-Case: Molded plastic body DO-201AD
-Terminals: Solderable per MIL-STD-750 Method 2026
-Polarity: Color band denotes cathode end
-Mounting Position: Any
-Weight: 1.12grams
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
Parameter
Symbol
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=100°C, See Figure 1
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method) TL=110°C
Maximum f
3.0A
orward voltage at
Maximum DC reverse current
TA=25°C
At rated DC blocking voltage
TA=100°C
Typical junction capacitance (Note 1)
Operating junction temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
TJ
-55 to +150
V
V
V
A
A
V
pF
°C/W
mA
NOTES:
1.
.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
Storage temperature range
2. Thermal resistance junction to ambient and junction to lead.
TSTG
°C
°C
Typical t
(Note 2)
hermal resistance
RθJA
RθJL
20
20
40
40
45
45
50
50
60
60
80
80
100
100
14
28
30
35
42
56
70
3.0
-55 to +150
-55 to +125
10
20
40.0
20.0
0.5
0.50
0.85
0.70
250
80
SB
320-G
SB
340-G
SB
345-G
SB
350-G
SB
360-G
SB
3100-G
SB
380-G
Comchip
S M D D i o d e S p e c i a l i s t
90


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