Z0109MN0 datasheet(8/17 Pages) NXP

部件名	Z0109MN0

功能描述	4Q Triac Rev. 3 ??12 May 2011

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制造商	NXP [NXP Semiconductors]

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Z0109MN0

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Product data sheet

Rev. 3 — 12 May 2011

8 of 17

NXP Semiconductors

Z0109MN0

4Q Triac

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IGT

gate trigger current

VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C;

see Figure 9

0.4

-

10

mA

VD =12V; IT = 0.1 A; T2+ G-; Tj =25 °C;

see Figure 9

0.4

-

10

mA

VD =12V; IT = 0.1 A; T2- G-; Tj =25°C;

see Figure 9

0.4

-

10

mA

VD =12V; IT = 0.1 A; T2- G+; Tj =25 °C;

see Figure 9

0.4

-

10

mA

IL

latching current

VD =12V; IG = 0.1 A; T2+ G+; Tj =25°C;

see Figure 10

--15

mA

VD =12V; IG = 0.1 A; T2+ G-; Tj =25 °C;

see Figure 10

--30

mA

VD =12V; IG = 0.1 A; T2- G-; Tj =25°C;

see Figure 10

--15

mA

VD =12V; IG = 0.1 A; T2- G+; Tj =25 °C;

see Figure 10

--15

mA

IH

holding current

VD =12V; Tj =25°C; see Figure 11

--10

mA

VT

on-state voltage

IT = 1.4 A; Tj =25°C; see Figure 12

-1.3

1.6

V

VGT

gate trigger voltage

VD =12V; IT = 0.1 A; Tj =25 °C;

see Figure 13

--1.3

V

VD =600 V; IT = 0.1 A; Tj = 125 °C;

see Figure 13

0.2

--V

ID

off-state current

VD =600 V; Tj = 125 °C

-

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM =402 V; Tj = 110 °C; gate open

circuit; exponential waveform;

see Figure 14

120

-

V/µs

dVcom/dt

rate of change of

commutating voltage

VD =400 V; Tj =110 °C;

dIcom/dt = 0.44 A/ms; gate open circuit

2

--V/µs

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