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TS12012 数据表(PDF) 4 Page - Touchstone Semiconductor Inc |
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TS12012 数据表(HTML) 4 Page - Touchstone Semiconductor Inc |
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4 / 11 page  TS12011/TS12012 Page 4 TS12011_12DS r1p0 RTFDS VDD = 0.8V, VSS = 0V, VCOMPIN+/- = 0V, VAMPIN+/- = 0V, VAMPOUT = (VDD + VSS)/2, VCOMPOUT = HiZ. TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See note 1. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS CONTROL PIN SECTION T Input Low Voltage VIL Comparator Latched Output Enabled 0.8V ≤ V DD ≤ 1.1V 0.1 V 1.1V < VDD ≤ 2.5V 0.2 T Input High Voltage VIH Comparator Latched Output Disabled 0.8V ≤ V DD ≤ 1.1V VDD - 0.1 V 1.1V < VDD ≤ 2.5V 1 T Input Leakage V T = VSS; V T = 5.5V 100 nA Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified. Note 2: VOS is defined as the center of the hysteresis band at the input. Note 3: The hysteresis-related trip points are defined by the edges of the hysteresis band and measured with respect to the center of the hysteresis band (i.e., VOS). Note 4: The propagation delays are specified with an output load capacitance of CL = 15pF. VOVERDRIVE is defined above and is beyond the offset voltage and hysteresis of the comparator input. |
类似零件编号 - TS12012 |
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类似说明 - TS12012 |
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