Parameter

Symbol

Unit

Repetitive peak reverse voltage

Continuous reverse voltage

RMS voltage

Max. Forward rectified current

Max. Forward surge current, 8.3ms single

half sine-wave superimposed on rated

load (JEDEC method)

Max.Reverse current

Typ. Thermal resistance

Typ. Diode Junction capacitance (Note 1)

Reverse Voltage: 20 to 100 Volts

Forward Current: 3.0 Amp

RoHS Device

CDBMH320-HF Thru. CDBMH3100-HF

Page 1

QW-JB015

SMD Schottky Barrier Rectifiers

REV:B

Comchip Technology CO., LTD.

CDBMH

320-HF

CDBMH

340-HF

CDBMH

360-HF

CDBMH

380-HF

CDBMH

3100-HF

20

20

14

40

40

28

60

60

42

3.0

0.70

80

0.2

20

30

80

80

56

100

100

70

V

V

V

A

V

A

mA

°C/W

°C

0.50

0.85

Note :

Mechanical data

-Case: Molded plastic, SOD-123T/Mini SMA.

-Terminals: Solderable per MIL-STD-750,

method 2026.

-Polarity: Indicated by cathode band.

-Weight: 0.018 grams approx.

Operating temperature

Storage temperature range

-65 to +175

°C

-55 to +125

-55 to +150

250

P

F

CDBMH

330-HF

30

30

21

CDBMH

350-HF

50

50

35

1. F=1MHz and applied 4V DC reverse voltage

Halogen Free

Features

-Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

-Low profile surface mounted application in order to

optimize board space.

-Low power loss, high efficiency.

-High current capability, low forward voltage drop.

-High surge capability.

-Guardring for overvoltage protection.

-Ultra high-speed switching.

-Silicon epitaxial planar chip, metal silicon junction.

-Lead-free parts meet environmental standards of

MIL-STD-19500/228

-Heat sink bottom.

Dimensions in inches and (millimeter)

SOD-123T

0.154(3.90)

0.138(3.50)

0.012(0.30) Typ.

0.071(1.80)

0.055(1.40)

0.067(1.70)

0.051(1.30)

0.040(0.10)

0.096(2.40)

0.080(2.00)

0.024(0.60)

0.008(0.20) Typ.

0.036(0.90)

0.064(1.60)

0.048(1.20)

0.020(0.50)

0.0375(0.95)

0.0296(0.75)

0.052(1.30)

0.036(0.90)

0.024(0.60) Typ.

0.044(1.10)

0.028(0.70)