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CDBA3150-HF 数据表(PDF) 1 Page - Comchip Technology |
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CDBA3150-HF 数据表(HTML) 1 Page - Comchip Technology |
1 / 4 page SMD Schottky Barrier Rectifiers Reverse Voltage: 150 to 200 Volts Forward Current: 3.0 Amp RoHS Device Page 1 REV:A CDBA3150-HF Thru. CDBA3200-HF Comchip Technology CO., LTD. Features -Ultra high-speed switching. Mechanical data -Case: Molded plastic, DO-214AC / SMA -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -weight: 0.055 grams -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency. -Hight current capability, low forward voltage drop. -Hight surge capability. -Guardring for overvoltage protection. -Epoxy: UL94-V0 rate flame retardant. -Silicon epitaxial planar chip,metal silicon junction. Dimensions in inches and (millimeter) DO-214AC (SMA) 0.067 (1.70) 0.047 (1.20) 0.114 (2.90) 0.083 (2.10) 0.181 (4.60) 0.157 (4.00) 0.008(0.20) 0.004(0.10) 0.012 (0.30) TYP. 0.209 (5.30) 0.185 (4.70) 0.061 (1.55) 0.030 (0.75) 0.098 (2.50) 0.067 (1.70) Maximum Ratings and Electrical Characteristics Forward surge current Reverse Current Storage temperature A A mA Parameter Conditions on rate load (JEDEC method) 8.3ms single half sine-wave superimposed Forward rectified current see Fig.1 Thermal Resistance Diode Junction capacitance VR =VRRM TA=25°C VR =VRRM TA=100°C f=1MHZ and applied 4V DC reverse Voltage Junction to ambient Symbol IO IFSM IR RθJA CJ TSTG IR MIN. TYP. MAX. mA °C/W pF °C 3.0 70 0.5 20 55 250 -50 +175 Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . Units QW-JB017 Halogen Free Max. Repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage CDBA 3150-HF Units Symbol Parameter VRRM VDC VRMS 150 150 105 V V V CDBA 3200-HF 200 200 140 Max. Instantaneous forward voltage @ 3.0A, TA=25°C VF 0.87 V 0.90 Operating Temperature TJ -50 to +175 °C |
类似零件编号 - CDBA3150-HF |
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类似说明 - CDBA3150-HF |
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