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ML1225-X-T92-K 数据表(PDF) 2 Page - Unisonic Technologies |
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ML1225-X-T92-K 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 3 page XL/ML1225 SCR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw QW-R301-003.F ABSOLUATE MAXIUM RATINGS (Ta= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT XL1225 400 Repetitive Peak Off-State Voltage (TJ =40 ~ 125°C, RGK =1kΩ ) ML1225 VDRM 300 V On-State Current (Tc=40 °C) IT(RMS) 0.8 A Average On-State Current (Half Cycle=180,Tc=40°C) IT(AV) 0.5 A Peak Reverse Gate Voltage (IGR=10 μA) VGRM 1 V Peak Gate Current (10 μs Max.) IGM 0.1 A Gate Dissipation (20ms Max.) PG(AV) 150 mW Junction Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20 °C ~85°C. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off State Leakage Current IDRM VDRM(RGK=1KΩ), TJ =125°C 0.1 mA Off State Leakage Current IDRM VDRM(RGK=1KΩ), TJ =25°C 1.0 μA AT IT=0.4A 1.4 On State Voltage VT AT IT=0.8A 2.2 V On State Threshold Voltage VT(TO) TJ =125°C 0.95 V On State Slops Resistance Rt TJ =125°C 600 m Gate Trigger Current IGT VD=7V 200 μA Gate Trigger Voltage VGT VD=7V 0.8 V Holding Current IH RGK=1KΩ 5 mA Latching Current IL RGK=1KΩ 6 mA Critical Rate of Voltage Rise DV/DT VD=0.67*VDRM(RGK=1KΩ),TJ =125°C V/ μs Critical Rate of Current Rise DV/DT IG=10mA, dIG/dt=0.1A/μs,TJ =125°C A/ μs Gate Controlled Delay Time TGD IG=10mA, dIG/dt=0.1A/μs 2.2 μs Commutated Turn-off Time TG TJ =85°C, VD=0.67*VDRM, VR=35V, IT=IT(AV) 200 μs CLASSIFICATION OF IGT RANK B C AA AB AC AD RANGE 50-100 100-200 8-15 15-20 20-25 25-50 |
类似零件编号 - ML1225-X-T92-K |
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类似说明 - ML1225-X-T92-K |
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