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UTM4052G-TN4-R 数据表(PDF) 3 Page - Unisonic Technologies |
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UTM4052G-TN4-R 数据表(HTML) 3 Page - Unisonic Technologies |
3 / 9 page UTM4052 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 9 www.unisonic.com.tw QW-R502-137.E ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) N-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 2) TC=25°C ID 7.5 A Pulsed Drain Current (Note 2) TC=25°C IDM 30 A SOP-8 3.1 W Power Dissipation (TC=25°C) TO-252-4 PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 2) TC=25°C ID -6 A Pulsed Drain Current (Note 2) TC=25°C IDM -25 A SOP-8 3.1 W Power Dissipation (TC=25°C) TO-252-4 PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t≤10sec. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOP-8 78 °C/W Junction to Ambient (Note) TO-252-4 θJA 50 °C/W SOP-8 40 °C/W Junction to Case TO-252-4 θJC 5 °C/W Note: Surface Mounted on 1in 2 pad area, t≤10sec. |
类似零件编号 - UTM4052G-TN4-R |
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类似说明 - UTM4052G-TN4-R |
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