PZT1816G-X-AA3-R datasheet(2/5 Pages) UTC

部件名	PZT1816G-X-AA3-R

功能描述	HIGH CURRENT SWITCHIG APPLICATIONS

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制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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PZT1816

NPN PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R207-025.A

ABSOLUTE MAXIMUM RATINGS (TA =25℃ )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

6

V

DC

4

A

Collector Current

PULSE(Note 2)

IC

8

A

Power Dissipation

PD

1

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Note2: Duty=1/2, Pw=20ms

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Base Breakdown Voltage

BVCBO

IC =10μA, IE =0

120

V

Collector Emitter Breakdown Voltage

BVCEO

IC =1mA, RB=∞

100

V

Emitter Base Breakdown Voltage

BVEBO

IE =10μA, IC=0

6

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 2A, IB =0.2A

0.9

1.2

V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = 2A, IB=0.2A

150

400

mV

Collector Cut-Off Current

ICBO

VCB = 100 V, IE =0

1

μA

Emitter Cut-Off Current

IEBO

VEB = 4V, IC=0

1

μA

hFE1

VCE = 5V, IC = 0.5A

70

400

DC Current Transfer Ratio

hFE2

VCE =5V, IC = 3A

40

Transition Frequency

fT

VCE =10V, IC =0.5A

180

MHz

Output Capacitance

Cob

VCB =10V, IE =0A, f =1MHz

40

pF

Turn-on Time

tON

See test circuit

100

ns

Storage Time

tSTG

See test circuit

900

ns

Fall Time

tF

See test circuit

50

ns

CLASSIFICATION of hFE1

RANK

R

S

T

Q

RANGE

100 - 200

140 - 280

200 - 400

70 -140

类似零件编号 - PZT1816G-X-AA3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	PZT1816G-X-AA3-R	267Kb / 5P	HIGH CURRENT SWITCHIG APPLICATIONS

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