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3N80G-TA3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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3N80G-TA3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 3N80 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-283.E ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) VDGR 800 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Insulation Withstand Voltage (DC) TO-220F/ TO-220F1 VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 170 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 70 Power Dissipation TO-220F/ TO-220F1 PD 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. 3. 4. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) starting TJ=25 °C, ID=IAR, VDD=50V ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W TO-220 1.78 Junction to Case TO-220F/ TO-220F1 θJC 5 °C/W |
类似零件编号 - 3N80G-TA3-T |
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类似说明 - 3N80G-TA3-T |
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