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3N60L-TN3-R 数据表(PDF) 6 Page - Unisonic Technologies |
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3N60L-TN3-R 数据表(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 3N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-110,G TYPICAL CHARACTERISTICS 0 0 Drain Current, ID (A) 24 1 2 4 5 6 On-Resistance Variation vs. Drain Current and Gate Voltage 3 6 8 10 12 1 0.1 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 Note: TJ=25℃ Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V |
类似零件编号 - 3N60L-TN3-R |
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类似说明 - 3N60L-TN3-R |
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