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3N60L-TF3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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3N60L-TF3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 3N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-110,G ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 75 TO-220F/TO-220F1 34 Power Dissipation TO-251/TO-252 PD 50 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62.5 TO-220F/TO-220F1 62.5 Junction to Ambient TO-251/TO-252 θJA 110 °C/W TO-220 1.67 TO-220F/TO-220F1 3.68 Junction to Case TO-251/TO-252 θJC 2.5 °C/W |
类似零件编号 - 3N60L-TF3-T |
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类似说明 - 3N60L-TF3-T |
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