2SC2570A datasheet(5/10 Pages) RENESAS

部件名	2SC2570A

功能描述	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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5 / 10 page

Data Sheet PU10207EJ01V0DS

3

2SC2570A

TYPICAL CHARACTERISTICS (TA = +25

°°°°C, unless otherwise specified)

Free Air

1 000

800

600

400

200

0

25

50

75

100

125

150

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

200

50

100

10

20

15

10

0.5

50

VCE = 10 V

50

10

1

5

0.5

0.7

0.6

0.5

0.8

0.9

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VCE = 10 V

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

7

1

2

5

0.2

0.5

0.1

15 7 10

50

0.5

70

f = 1 MHz

Collector to Base Voltage VCB (V)

Emitter to Base Voltage VEB (V)

OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE

INPUT CAPACITANCE vs. EMITTER TO BASE VOLTAGE

2

1

0.5

0.3

0.5

0.4

1

2

3

5

10

20 30

Cob

Cib

类似零件编号 - 2SC2570A

制造商	部件名	数据表	功能描述
NEC	2SC2570A	119Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor ...	2SC2570A	248Kb / 5P	isc Silicon NPN RF Transistor
NEC	2SC2570A-T	119Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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类似说明 - 2SC2570A

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Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002
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