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1N5230B 数据表(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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1N5230B 数据表(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 3 page 1N5221B THRU 1N5267B Silicon Z–Diodes Features D Plannar Die constuction D 500mW Power Dissipation D Ideally Suited for Automated Assembly Processes D VZ–tolerance ± 5% Applications MECHANICAL DATA Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation Tamb=25°C PTOT 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+ 175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=9.5mm (3/8”), TL=constant RthJA 300 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.1 V DO-35 Unit: inch (mm) 1. 02 (2 6. 0) MIN. .022(0.55) .018(0.45) 1.0 2 (26 . 0) MIN. .087(2.2) .067(1.7) .153(3.6) .132(3.0) Approx. Weight: 0.136 grams WILLS ELECTRONIC CORP. 2010.06 WILLAS |
类似零件编号 - 1N5230B |
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类似说明 - 1N5230B |
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