BUZ80A datasheet(5/9 Pages) SIEMENS

部件名	BUZ80A

功能描述	SIPMOS Power Transistor (N channel Enhancement mode)

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制造商	SIEMENS [Siemens Semiconductor Group]

网页	http://www.siemens.com/

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5 / 9 page

5

07/96

Semiconductor Group

BUZ 80A

Drain current

ID = ƒ(TC)

parameter:

V

GS ≥ 10 V

0

20

40

60

80

100

120

°C

160

T

C

0.0

0.4

0.8

1.2

1.6

2.0

2.4

A

3.2

I

D

Power dissipation

Ptot = ƒ(TC)

0

20

40

60

80

100

120

°C

160

T

C

0

10

20

30

40

50

60

W

80

P

tot

Safe operating area

I

D = ƒ(VDS)

parameter:

D = 0.01, T

C = 25°C

-2

10

-1

10

0

10

1

10

2

10

A

I

D

10

0

10

1

10

2

10

3

V

DS

R

V

I

DC

10 ms

1 ms

100 µs

10 µs

1 µs

t

p

= 670.0ns

Transient thermal impedance

Z

th JC = ƒ(tp)

parameter:

D = t

p / T

-3

10

-2

10

-1

10

0

10

1

10

K/W

Z

thJC

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

s

t

p

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

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