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BUZ72 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ72 数据表(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 9 page  Semiconductor Group 1 07/96 BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 72 100 V 10 A 0.2 Ω TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C ID 10 A Pulsed drain current TC = 25 °C IDpuls 40 Avalanche current,limited by Tjmax IAR 10 Avalanche energy,periodic limited by Tjmax EAR 7.9 mJ Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 °C EAS 59 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 40 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
类似零件编号 - BUZ72 |
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类似说明 - BUZ72 |
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