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BUZ342 数据表(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ342 数据表(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 07/96 BUZ 342 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • d v/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω TO-218 AA C67078-S3135-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 150 °C ID 60 A Pulsed drain current TC = 25 °C IDpuls 240 Avalanche energy, single pulse ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 128 µH, Tj = 25 °C EAS 460 mJ Reverse diode d v/dt IS = 0 A, VDS = 0 V, diF/dt = 0 A/µs Tjmax = 0 °C d v/dt kV/µs Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 400 W Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 0.37 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 175 / 56 |
类似零件编号 - BUZ342 |
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类似说明 - BUZ342 |
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