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BUZ173 数据表(PDF) 6 Page - Siemens Semiconductor Group |
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BUZ173 数据表(HTML) 6 Page - Siemens Semiconductor Group |
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6 / 9 page  Semiconductor Group 6 07/96 BUZ 173 Typ. output characteristics ID = ƒ(VDS) parameter: t p = 80 µs 0 -4 -8 -12 -16 V -24 V DS 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0 I D V GS [V] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 l Ptot = 40W l -20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V GS 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0 I D 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ω 5.0 R DS (on) VGS [V] = a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 l l -20.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 V GS 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0 I D 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 S 4.0 g fs |
类似零件编号 - BUZ173 |
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类似说明 - BUZ173 |
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