数据搜索系统,热门电子元器件搜索 |
|
2SD1060 数据表(PDF) 2 Page - Sanyo Semicon Device |
|
2SD1060 数据表(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page 2SD1060 No.686-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=40V, IE=0A 0.1 mA Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 mA DC Current Gain hFE1VCE=2V, IC=1A 100* 280* hFE2VCE=2V, IC=2A 80 Gain-Bandwidth Product fT VCE=5V, IC=1A 30 MHz Output Capacitance Cob VCB=10V, f=1MHz 100 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.3A 0.3 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0A 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0A 6 V Turn-On Time ton See specified Test Circuit 0.1 μs Storage Time tstg 1.4 μs Fall Time tf 0.2 μs * : The 2SD1060 is classified by 1A hFE as follows Rank R S hFE 100 to 200 140 to 280 Switching Time Test Circuit PW=20 μs D.C. ≤1% VR RB VCC=20V VBE= --5V + + 50 Ω INPUT OUTPUT RL= 10 Ω 100 μF 470 μF IB1 IB2 IC=10IB1= --10IB2=2A IC -- VCE Collector-to-Emitter Voltage, VCE -- V IB=0mA 50mA 100mA 150mA 250mA 300mA 350mA 400mA 200mA ITR08436 10 8 6 4 2 0 0 0.8 2.4 2.0 0.4 1.2 1.6 IC -- VBE Base-to-Emitter Voltage, VBE -- V 10 8 5 2 1 9 6 7 3 4 0 VCE=2V 0 0.2 0.4 0.6 0.8 1.4 1.2 1.0 ITR08438 |
类似零件编号 - 2SD1060 |
|
类似说明 - 2SD1060 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |